2012 IEEE International Electron Devices Meeting
The Annual Technical Meeting of the Electron Devices Society will be held at the Hilton San Francisco Union Square San Francisco, CA
December 10-12, 2012

With a history stretching back nearly 60 years, the IEEE International Electron Devices Meeting (IEDM) is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound and organic semiconductors, but also in emerging material systems. IEDM is truly an international conference, with strong representation from speakers from around the globe.

In 2012 there is once again an increased emphasis on circuit and device interaction. With ever increasing transistor count, nanometer design rules and layout restrictions, circuit-device interaction is becoming critical to providing viable technology solutions. This new emphasis includes technology/circuit co-optimization, power/performance/area analyses, design for manufacturing and process control, as well as CMOS platform technology and scaling.

MEETING HIGHLIGHTS

• Three plenary presentations by prominent experts
• Invited papers on all aspects of advanced devices and technologies
• Two Evening Panel Discussions
• Presentation of IEEE/EDS Awards
• IEDM Luncheon presentation will be held on December 11
• 90 minute Tutorial Sessions on Emerging Topics on Saturday, December 8
• Two Short Courses will be held on Sunday, December 9