After the Transistor, a Leap Into the Microcosm

September 1, 2009 | Source: New York Times

Silicon nanowires (IBM)

As scaling down the transistor approaches fundamental physical limits, researchers at IBM and Intel are developing new materials and fabrication techniques, including FinFET (transistors tipped vertically for greater density and insulation), nanowires, and DNA origami (for precision nanowire scaffolding).