Carbon nanotube-based ultra-low voltage integrated circuits may extend Moore’s law
June 24, 2012
Carbon nanotube-based integrated circuits can work with a supply voltage much lower than that used in conventional silicon integrated circuits, researchers from Peking University and Duke University have demonstrated
Low supply voltage circuits produce less heat, a key limiting factor for increased circuit density. So carbon-nanotube integrated circuits promise to extend Moore’s Law by allowing more transistors to fit onto a single chip without overheating.
Comments (6)
by Steven Roth
The United States Government should be spending MINIMUM 10 billion dollars on next generation computer chip research to extend Moore’s law as quickly as possible. Maybe I.B.M., Intel and A.M.D should be getting large subsidies instead of big oil.
by Gorden Russell
So when will we be able to have CNT computers in our hippocampus?
by Mortran
Before speculating about nanotubes and their hypothetical applications, does this mean we have already reached the end of Moore’s law with conventional semi-conductor technology?
by Your name
No, theoretically we still have until the 2020′s until that happens.
by JohnDoe
Not yet. This is one way to keep Moore’s law going, but we already have some other technologies like the 3d-gates and stackable chips (3d chips) that can extend the life of Moore’s law.
On the forefront science we have the quantum computing, DNA computers that can surpass today’s computer capabilities, but are in a early stage of development.
by Editor
According to the International Technology Roadmap For Semiconductors 2011 report (http://www.itrs.net/Links/2011ITRS/2011Chapters/2011ExecSum.pdf), “It is forecasted that by the end of this … decade (2019) it will be necessary to augment the capabilities of the CMOS process by introducing multiple new devices…” — which is when some suggest we might see CNT- and graphene-based ICs emerging. The ITRS roadmap goes to 2026, for which it forecasts half-pitch and gate length of 6 nm for microprocessors and half-pitch of 8 nm for memory devices — see figs. ORTC4 and ORTC3.