Intel researchers have revealed plans to use exotic materials such as carbon nanotubes and nanowires as well as novel techniques to take the transistor down to the atomic level.

Intel believes the ultimate transistor shape would be a pure cylinder with a gate wrapped entirely around the channel, striking the best balance between electron mobility and leakage control. It would be based on a silicon nanowire.

Intel is also looking into the feasibility of using other methods such as a magnetic field (with spintronics) to accomplish the same thing as conventional gates.