Nanowires Key to Future Transistors, Electronics

December 3, 2009 | Source: Science Daily

(Purdue University, Birck Nanotechnology Center/Seyet LLC)

A method for creating nanowire transistors with layers of silicon and germanium sharply defined at the atomic level has been developed by researchers at IBM, Purdue University and UCLA.

The nanowires are “grown” vertically, so they have a smaller footprint, which could make it possible to fit more transistors on a chip, extending Moore’s law.