New Surface Chemistry May Extend Life of Technology for Making Transistors

September 30, 2004 | Source: KurzweilAI

University of Illinois at Urbana-Champaign researchers developed a technique that uses surface chemistry to make tinier and more effective p-n junctions in silicon-based semiconductors.

The technique may lead to faster silicon-based transistors, helping to shrink the active region in p-n junctions from the current 25 nm down towards 10 nm thick.

University of Illinois news release