November 13, 2002
Harvard University researchers have synthesized nanowires that are only 50nm in diameter, containing a germanium core surrounded by a silicon shell. They also made “triple decker” wires of silicon, silicon oxide and germanium.
They have used these approaches to prepare new devices called nanowire field-effect transistors. Working with researchers from Intel, the team also plans to integrate these transistors with conventional semiconductor processing to produce advanced hybrid devices.