Energy-efficient computer memory using magnetic materials
December 19, 2012
By using electric voltage instead of a flowing electric current, researchers from UCLA‘s Henry Samueli School of Engineering and Applied Science have made major improvements to an ultra-fast, high-capacity class of computer memory known as magnetoresistive random access memory (MRAM).
The UCLA team’s improved memory, which they call MeRAM for magnetoelectric random access memory, has great potential to be used in future memory… read more













