Researchers at the University of Illinois at Urbana-Champaign have created the world’s fastest transistor, with a frequency of 509 gigahertz.

It could find use in applications such as high-speed communications products, consumer electronics and electronic combat systems.

Unlike traditional transistors, which are built from silicon and germanium, the Illinois transistors are made from indium phosphide and indium gallium arsenide, which are faster and can support a much higher current density. The design also uses a narrow metal bridge to separate the base terminal from the device connector post to reduce capacitance.

According to Milton Feng, the Holonyak Professor of Electrical and Computer Engineering at Illinois, the ultimate goal is to make a terahertz transistor.

University of Illinois at Urbana-Champaign press release