Scientists demonstrate method for integrating nanowire devices directly onto silicon

May 9, 2008 | Source: Nanowerk News

Scientists at Harvard University and the German universities of Jena, Gottingen, and Bremen have developed a new technique for fabricating nanowire photonic and electronic integrated circuits that may one day be suitable for high-volume commercial production.

By incorporating spin-on glass technology (used in silicon integrated circuits manufacturing) and photolithography (transferring a circuit pattern onto a substrate with light), the team demonstrated a reproducible, high-volume, low-cost fabrication method for integrating nanowire devices directly onto silicon.