Silicon’s Long Good-bye

November 19, 2010 | Source: Technology Review

Strips of indium arsenide have been chemically etched so that they release from the surface beneath. They can then be transferred to silicon wafers to make speedy, low-power transistors. (Nature Publishing Group)

Researchers at the University of California, Berkeley, have developed a reliable way to make fast, low-power, nanoscopic transistors out of a indium arsenide. Their method is simpler, it promises to be less expensive, and requires less power to operate at faster speeds, compared to existing methods using silicon.