University of California, Riverside have developed a conceptual design for a macroscopically addressable data storage device based on carbon nanotubes, which can be used as nonvolatile random access memory and for terabit solid-state storage.

The design involves inserting one hollow nanotube, closed at both ends, into a slightly larger one, open at both ends, creating a telescoping motion using an electrostatic charge. That contact between the nanotube and the electrodes creates a conduction pathway with three possible positions, with a switching time of 0.01 nanoseconds, allowing for building ultrafast high-density nonvolatile memory, up to 100 gigahertz or into the terahertz range.