IBM announces world’s fastest silicon-based transistor

June 25, 2001 | Source: KurzweilAI

IBM has built the world’s fastest silicon-based transistor, operating at 210 GHz while drawing just 1 mA of current. This represents an 80 percent performance improvement and a 50 percent reduction in power consumption over current designs, claims IBM.

IBM expects the new technology will result in communications chips at speeds of 100 GHz within two years — five times faster and four years sooner than recently-announced competitive approaches.