Transistors fabricated from carbon nanotubes now have electrical characteristics that can rival silicon devices. For example, IBM researchers have developed a carbon-nanotube FET (field effect transistor) that can compete with the leading prototype silicon transistors currently available.Progress has also been made in reducing the resistance at the nanotube-electrode interface. This has allowed different nanotubes to be assembled into basic logic circuits, an important step towards nanoelectronics.

Limitations in manufacturing techniques don’t yet allow for mass production, however.