Nantero reports 10-Gbit nanotube memory array

May 12, 2003 | Source: EE Times

Nantero Inc. has said it has created the basis of a 10-Gbit memory, using an array of more than 10 billion carbon nanotube “junctions” on a silicon wafer to create nonvolatile RAM.

Nantero estimated the total market for this type of memory, a potential replacement for all today’s established memory component formats, is about $100 billion a year.